Metal-Oxide Semiconductor Field Effect Transistor (MOSFET), Schottky Barrier Diode (SBD) Manufacturer China

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Oct. 31, 2023

Schottky Barrier Diodes（SBD）肖特基势垒二极管 Schottky Barrier Diodes, also known as hot carrier diodes, are made using the metal-semiconductor (M-S) junction contact characteristic. There are two core structures: point contact type and surface junction type.

Oct. 31, 2023

Fast Recovery Diodes（FRD）快恢复二极管 Fast Recovery Diodes (FRD), often referred to as fast recovery diodes, are semiconductor diodes known for their excellent switching characteristics and short reverse recovery time.

Nov. 01, 2023

Silicon Controlled Rectifier(SCR) 可控硅 A Silicon Controlled Rectifier (SCR), commonly known as a Thyristor, is a high-power electrical component. It is also referred to as a thyristor.

Nov. 07, 2023

Insulate-Gate Bipolar Transistor—IGBT(绝缘栅双极晶体管) 绝缘栅双极晶体管 The Insulated-Gate Bipolar Transistor (IGBT) combines the advantages of the Giant Transistor (GTR) and the Power MOSFET, and has good characteristics with a wide range of applications.

Nov. 07, 2023

MOSFET 半导体场效晶体管 The Metal-Oxide-Semiconductor Field-Effect Transistor, abbreviated as MOSFET, is a type of field-effect transistor widely used in both analog and digital circuits.

Nov. 07, 2023

The Structure of GaN HEMT Devices.器件的结构 HEMT devices are three-terminal voltage-controlled devices with three electrodes: the gate, source, and drain. The gate is typically a Schottky contact electrode, while the source and drain are Ohmic contact electrodes.

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